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a-IGZO在TFT-LCD通道材料及配向層應用之研究

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In this study we investigated the parameters such as oxygen flow rate, argon flow rate during channel material amorphous IGZO layer deposition using radio-frequency sputtering process. Also, the physical dimensions of channel width were varied at different oxygen flow rates in a-IGZO TFTs to achiev

e best performances for multidimensional based TFTs. The standard dielectric material as SiO2 as grown by simple, low cost and wide-range layer growth e-beam evaporator system. The improvements in electrical performance were achieved with e-beam deposited high-k dielectric Ta2O5 for a-IGZO TFTs. Als

o, further a-IGZO TFTs performances were investigated by comparative study of different dielectric material with annealing process as well as surface plasma treatment process. On the other hand, we successfully implemented the a-IGZO layer as an alignment layer for liquid crystal cell application us

ing the oblique sputter deposition method. The physical sputter process parameters such as radio frequency power, thickness of layer, inlet gas ratio and oblique angle were optimized to achieve better quality a-IGZO based alignment layer for fast response liquid crystal cells.The best condition atta

ined of a-IGZO TFT with dielectric material SiO2 in field effect mobility, sub-threshold swing, ratio of on current to the off current, interfacial trap density and threshold voltage are 27.7 cm2/V•s, 0.11 V/decay, 2.9×108, 1.1×1012 and 0.84 V, respectively Improve the quality of e-beam deposited Si

O2 used the plasma atmospheric pressure plasma treatment. The mobility enhance to 33.5 cm2/V•s used plasma treated e-beam deposited SiO2. Whereas, the high-k dielectric Ta2O5 improve the mobility of TFT about 30.07 cm2/V•s using low power RF-sputtering with compare others reported result.The a-IGZO

as an alignment of OCB cell rise time and fall time were 1.55 ms and 3.49 ms, respectivly. A very fast response time of 5.04 ms has thus been achived with compare using the traditional PI and others reported focused ion beam bombarded inorganic material as an alignment layer. The response time could

be improved farther with increased of RF sputter power. The experimental cell with a-IGZO alignment layer increased to RF power 70W rise time and fall time was 1.25 ms and 2.96 ms, respectivly. Thus, a very quick response time of 4.21 ms has been achieved. It was about 6.62 ms for the PI alignment

control cell.In this work we suggested a-IGZO layers that provide an approach to integrate LC alignment with a-IGZO based TFTs in both TFT and LCD on glass substrates. The TFT-LCD manufacturing process may be shortened and more cost-effective when the same material can be successfully developed for

both TFT addressing and LC alignment